DMN601DW new prod u c t features ? dual n-channel mosfet ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? ultra-small surface mount package ? lead free by design/rohs compliant (note 2) ? esd protected up to 2kv ? "green" device (note 4) mechanical data ? case: sot-363 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminals connections: see diagram ? terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? weight: 0.006 grams (approximate) sot-363 top view internal schematic source body diode equivalent circuit per element gate protection diode gate drai n s 1 d 1 d 2 s 2 g 1 g 2 top view esd protected up to 2kv maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain source voltage v dss 60 v gate-source voltage v gss 20 v drain current (note 1) continuous pulsed (note 3) i d 305 800 ma thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit total power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient r ja 625 c/w operating and storage temperature range t j , t stg -65 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 60 ? ? v v gs = 0v, i d = 10 a zero gate voltage drain current i dss ? ? 1 a v ds = 60v, v gs = 0v gate-source leakage i gss ? ? 10 a v gs = 20v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs(th) 1.0 1.6 2.5 v v ds = 10v, i d = 1ma static drain-source on-resistance r ds (on) ? ? ? 2.0 3.0 v gs = 10v, i d = 0.5a v gs = 5v, i d = 0.05a forward transfer admittance |y fs | 80 ? ? ms v ds =10v, i d = 0.2a diode forward voltage (note 5) v sd 0.5 ? 1.4 v v gs = 0v, i s = 115ma dynamic characteristics input capacitance c iss ? ? 50 pf output capacitance c oss ? ? 25 pf reverse transfer capacitance c rss ? ? 5.0 pf v ds = 25v, v gs = 0v f = 1.0mhz notes: 1. device mounted on fr-4 pcb. 2. no purposefully added lead. 3. pulse width 10 s, duty cycle 1%. 4. short duration pulse test used to minimize self-heating effect. smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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